Intrinsic electrical transport and performance projections of synthetic monolayer MoS sub(2) devices

We demonstrate monolayer (1L) MoS sub(2) grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ~10 super(13) cm super(-2)) and temperatures (80-500 K). Transfer length measurements decoup...

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Published in:2d materials 2017-03, Vol.4 (1), p.011009-011009
Main Authors: Smithe, Kirby K H, English, Chris D, Suryavanshi, Saurabh V, Pop, Eric
Format: Article
Language:English
Subjects:
Carrier density
Chemical vapor deposition
Devices
Electronics
Molybdenum disulfide
Monolayers
Semiconductors
Simulation
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English, Chris D
Suryavanshi, Saurabh V
Pop, Eric
description We demonstrate monolayer (1L) MoS sub(2) grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ~10 super(13) cm super(-2)) and temperatures (80-500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>10 super(12) cm super(-2)). We demonstrate the highest current density reported to date (~270 [mu]A [mu]m super(-1) or 44 MA cm super(-2)) at 300 K for an 80 nm long device from CVD-grown 1L MoS sub(2). Using simulations, we discuss what improvements of 1L MoS sub(2) are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.
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subjects Carrier density
Chemical vapor deposition
Devices
Electronics
Molybdenum disulfide
Monolayers
Semiconductors
Simulation
title Intrinsic electrical transport and performance projections of synthetic monolayer MoS sub(2) devices
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