Performance of the INTPIX6 SOI pixel detector

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 [mu] m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 x 896 integrating type squared pixels of 12 micron pitch. In...

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Bibliographic Details
Published in:Journal of instrumentation 2017-01, Vol.12 (1), p.C01028-C01028
Main Authors: Arai, Y., Bugiel, Sz, Dasgupta, R., Idzik, M., Kapusta, P., Kucewicz, W., Miyoshi, T., Turala, M.
Format: Article
Language:English
Subjects:
CMOS
Detectors
Electrical resistivity
Equivalence
Monitoring
Noise
Pixels
Radiation hardness
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Summary:Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 [mu] m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 x 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using super(241) Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e super(-). The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e super(-). The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/12/01/C01028