Structure and dielectric property of CaTiSiO sub(5) doped BST ceramics sintered at low temperature

• Published in: Ferroelectrics 2016-09, Vol.502 (1), p.43-48
• Main Authors: Huang, Xinyou, Yin, Jia, Gao, Chunhua, Huang, Musheng, Yue, Zhenxing
• Format: Article
• Language: English
• Subjects: Capacitance; Ceramics; Dielectric constant; Dielectric loss; Dielectric properties; Doping; Sintering; Voltage
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150193.2016.1233021

Structure and dielectric property of CaTiSiO sub(5) doped (Ba, Sr)TiO sub(3)(barium strontium titanate, BST) capacitor ceramics were studied by means of X-ray diffraction(XRD),Scanning electron microscopy(SEM) and traditional solid sate sintered method. The results showed that dielectric loss of BST ceramics doped with CaTiSiO sub(5) had low value, moving effect and broadening effect of CaTiSiO sub(5) for curie peak of BST ceramics were obvious. Dielectric constant([Greek Lunate Epsilon] sub(r)) increased firstly and then decreased, dielectric loss (tan delta ) increased firstly and then decreased, AC withstand voltage strength(E sub(b)) increased firstly and then decreased, capacitance temperature changing rate( Delta C/C) decreased firstly and then increased in the negative temperature range and positive temperature range, when CaTiSiO sub(5) doping amount increased. The BST ceramics possessed good comprehensive property with [Greek Lunate Epsilon] sub(r) of 2540, tan delta of 0.0036, E sub(b) of 5.6 kV/mm(AC), Delta C/C of -18.9 similar to 20.6% in the temperature range of -30 degree similar to 85 degree , the capacitance temperature characteristic was suited for Y5S, when CaTiSiO sub(5) doping amount was 0.8wt.%.