Design and analysis of carbon nanotube FET based quaternary full adders

CMOS binary logic is limited by short channel effects, power density, and interconnection restrictions. The effective solution is non-silicon multiple-valued logic （MVL） computing. This study presents two high-performance quaternary full adder cells based on carbon nanotube field effect transistors...

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Bibliographic Details
Published in:Frontiers of information technology & electronic engineering 2016-10, Vol.17 (10), p.1056-1066
Main Authors: Moaiyeri, Mohammad Hossein, Sedighiani, Shima, Sharifi, Fazel, Navi, Keivan
Format: Article
Language:English
Subjects:
Carbon nanotubes
Channels
Communications Engineering
Computer Hardware
Computer Science
Computer simulation
Computer Systems Organization and Communication Networks
Design engineering
Electrical Engineering
Electronics and Microelectronics
Energy consumption
Field effect transistors
Instrumentation
Logic
Networks
Power consumption
Semiconductor devices
Simulation
Threshold voltage
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Summary:CMOS binary logic is limited by short channel effects, power density, and interconnection restrictions. The effective solution is non-silicon multiple-valued logic （MVL） computing. This study presents two high-performance quaternary full adder cells based on carbon nanotube field effect transistors （CNTFETs）. The proposed designs use the unique properties of CNTFETs such as achieving a desired threshold voltage by adjusting the carbon nanotube diameters and having the same mobility as p-type and n-type devices. The proposed circuits were simulated under various test conditions using the Synopsys HSPICE simulator with the 32 nm Stanford comprehensive CNTFET model. The proposed designs have on average 32% lower delay, 68% average power, 83% energy consumption, and 77% static power compared to current state-of-the-art quaternary full adders. Simulation results indicated that the proposed designs are robust against process, voltage, and temperature variations, and are noise tolerant.
ISSN:2095-9184
2095-9230
DOI:10.1631/FITEE.1500214