Quantum Hall Spin Diode

Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low...

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Bibliographic Details
Published in:Physical review letters 2017-05, Vol.118 (18), p.186801-186801, Article 186801
Main Authors: Eisenstein, J P, Pfeiffer, L N, West, K W
Format: Article
Language:English
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Summary:Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the N=1 Landau level at filling factors ν=5/2 and 7/2 is essentially complete, and, with the aid of an in-plane magnetic field component, that Landau level mixing at these filling factors is weak in the samples studied.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.118.186801