Ion transport-related resistive switching in film sandwich structures

• Published in: Chinese science bulletin 2014-07, Vol.59 (20), p.2363-2382
• Main Authors: Zhu, Xiao-Jian, Shang, Jie, Liu, Gang, Li, Run-Wei
• Format: Article
• Language: English
• Subjects: Absorbance; Chemical reactions; Chemistry/Food Science; Devices; Earth Sciences; electrochemistry; energy; Engineering; Humanities and Social Sciences; Information storage; Invited Review; Ion transport; ions; Life Sciences; magnetism; microstructure; Modulation; multidisciplinary; phase transition; physical properties; Physics; Sandwich structures; Science; Science (multidisciplinary); Switching; 信息存储; 夹层结构; 开关现象; 电化学反应; 电阻式; 离子迁移; 薄膜; 运输
• ISSN: 1001-6538; 1861-9541
• DOI: 10.1007/s11434-014-0284-8

Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years. To utilize the resistive switching memories for high-performance information storage applications, a thorough understanding of the key information of ion transport process, including the mobile ion species, the ion transport paths, as well as the electrochemical reaction behaviors of these ions should be provided for material and device optimization. Moreover, ion transport is usually accompanied by processes of microstructure modification, phase transition, and energy band structure variation that lead to further modulation of other physical properties, e.g., magnetism, optical emission/absorbance, etc., in the resistive switching materials. Therefore, novel resistive switching memories that are controlled through additional means of magnetic or optical stimulus, or demonstrate extra functionalities beyond information storage, can be made possible via well-defined ion transportation in various switching materials and devices. In this contribution, the mechanism of ion transport and related resistive switching phenomena in thin film sandwich structures is discussed first, followed by a glance at the recent progress in the development of high-performance and multifunctional resistive switching memories. A brief perspective of the ion transport-based resistive switching memories is addressed at the end of this review.