Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

β‐SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was β‐SiC(001){111}//Si(001){111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 μm/h, which is 5‐200 times higher than that of co...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2017-04, Vol.100 (4), p.1634-1641
Main Authors: Zhu, Peipei, Xu, Qingfang, Chen, Ruyi, Zhang, Song, Yang, Meijun, Tu, Rong, Zhang, Lianmeng, Goto, Takashi, Yan, Jiasheng, Li, Shusen
Format: Article
Language:English
Subjects:
Ceramics
Chemical vapor deposition
Cross sections
Deposition
Epitaxial growth
Lasers
Planes
silicon carbide
Substrates
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Summary:β‐SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was β‐SiC(001){111}//Si(001){111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 μm/h, which is 5‐200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing β‐SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8° to the surface of substrate. The growth mechanism of the films was discussed.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.14672