Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS sub(2) field-effect transistors

We demonstrate a simple and rapid method for the fabrication of multilayer molybdenum disulfide (MoS sub(2)) field-effect transistors (FETs) by exploiting various functions of an octadecylphosphonic acid (ODPA)-based self-assembled monolayer (SAM). The SAM is used both for selective metal removal in...

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Published in:Japanese Journal of Applied Physics 2017-04, Vol.56 (4), p.04CP10-04CP10
Main Authors: Du, Wanjing, Kawanago, Takamasa, Oda, Shunri
Format: Article
Language:English
Subjects:
Devices
Dielectrics
Electrodes
Field effect transistors
Gates
Molybdenum disulfide
Self-assembled monolayers
Semiconductor devices
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creator Du, Wanjing
Kawanago, Takamasa
Oda, Shunri
description We demonstrate a simple and rapid method for the fabrication of multilayer molybdenum disulfide (MoS sub(2)) field-effect transistors (FETs) by exploiting various functions of an octadecylphosphonic acid (ODPA)-based self-assembled monolayer (SAM). The SAM is used both for selective metal removal in patterning to simplify the fabrication process and as an ultrathin gate dielectrics in the device. The low voltage operation of the MoS sub(2) FETs was observed with a low gate leakage current and small hysteresis. In addition, selective metal removal can effectively narrow the spacing between the gate and contact electrodes, resulting in improved device characteristics. This approach also makes it possible to transfer thinner and smaller MoS sub(2) flakes. This study suggests intriguing applications of the SAM for the fabrication of functional electronic devices.
doi_str_mv 10.7567/JJAP.56.04CP10
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source Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Devices
Dielectrics
Electrodes
Field effect transistors
Gates
Molybdenum disulfide
Self-assembled monolayers
Semiconductor devices
title Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS sub(2) field-effect transistors
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