KF addition to Cu sub(2) SnS sub(3) thin films prepared by sulfurization process

Cu sub(2) SnS sub(3) thin films were fabricated by sulfurization with KF addition and applied to photovoltaic devices. Two methods, two-stage annealing and the use of four-layer precursors, were employed, and the quantity of NaF and KF and the annealing temperature were changed. By electron probe mi...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-04, Vol.56 (4), p.04CS02-04CS02
Main Authors: Nakashima, Mitsuki, Fujimoto, Junya, Yamaguchi, Toshiyuki, Sasano, Junji, Izaki, Masanobu
Format: Article
Language:English
Subjects:
Annealing
Photovoltaic cells
Precursors
Raman spectra
Solar cells
Sulfurization
Thin films
X ray diffraction
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Cu sub(2) SnS sub(3) thin films were fabricated by sulfurization with KF addition and applied to photovoltaic devices. Two methods, two-stage annealing and the use of four-layer precursors, were employed, and the quantity of NaF and KF and the annealing temperature were changed. By electron probe microanalysis (EPMA), the Cu/Sn mole ratio was found to range from 0.81 to 1.51. The X-ray diffraction (XRD) patterns and Raman spectra indicated that the fabricated thin films had a monoclinic Cu sub(2) SnS sub(3) structure. The Cu sub(2) SnS sub(3) thin films fabricated by two-stage annealing had a close-packed structure and a pinhole-free surface morphology. The best solar cell in this study showed V sub(oc) of 293 mV, which surpassed the previously reported value.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.04CS02