Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure

Lateral heterostructures built from an armchair MoS2 nanoribbon (AMoS2NR) and an armchair NbS2 nanoribbon (ANbS2NR) were studied based on first-principles calculations and a non-equilibrium Green's function method. It is found that the work function of the AMoS2NR shows substantial oscillation...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2017, Vol.19 (2), p.1303-1310
Main Authors: Yang, Zhixiong, Pan, Jiangling, Liu, Qi, Wu, Nannan, Hu, Mengli, Ouyang, Fangping
Format: Article
Language:English
Subjects:
Chairs
Channels
Electrodes
Heterostructures
Low energy
Molybdenum disulfide
Nanostructure
Work functions
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Summary:Lateral heterostructures built from an armchair MoS2 nanoribbon (AMoS2NR) and an armchair NbS2 nanoribbon (ANbS2NR) were studied based on first-principles calculations and a non-equilibrium Green's function method. It is found that the work function of the AMoS2NR shows substantial oscillation with increasing nanoribbon width, which is different from the work functions of other kinds of nanoribbons. The AMoS2NR-ANbS2NR lateral heterostructure exhibits an anomalous transport gap that is much larger than the bandgap of the AMoS2NR. As a result, a field effect transistor with AMoS2NR as the channel and ANbS2NRs as electrodes has high on-off ratios of 106-107 and a tiny leakage current of the order of 10-8 μA. These results suggest that lateral metal-semiconductor heterostructures of transition metal dichalcogenides may have potential applications in nanodevices with low energy consumption.
ISSN:1463-9076
1463-9084
DOI:10.1039/c6cp07327a