The Synthesis of Silicon Carbide in Rhombohedral Form with Different Chemicals

This study describes the attempt at producing silicon carbide using a simpler and less costly method. Within the study, XRD, EDX, and FTIR analyses were performed to determine the structural properties of the product, and SEM analyses were used to identify its surface properties. The characteristics...

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Bibliographic Details
Published in:Metallurgical and materials transactions. A, Physical metallurgy and materials science Physical metallurgy and materials science, 2017-06, Vol.48 (6), p.3108-3112
Main Author: Kariper, I Afsin
Format: Article
Language:English
Subjects:
Bonding
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemicals
Chemistry and Materials Science
Materials Science
Metallic Materials
Methods
Nanotechnology
Reagents
Silicon
Silicon carbide
Structural Materials
Suppliers
Surface area
Surface properties
Surfaces and Interfaces
Synthesis
Thin Films
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Summary:This study describes the attempt at producing silicon carbide using a simpler and less costly method. Within the study, XRD, EDX, and FTIR analyses were performed to determine the structural properties of the product, and SEM analyses were used to identify its surface properties. The characteristics such as porosity and surface area were determined through BET analysis. The starting reagents were compared with the product using FTIR analysis, whereas the product was compared with a sample of SiC procured from a supplier who manufactures high-purity products through BET analysis. In EDX analysis, approximately 72 pct Si and 28 pct C were identified. The vibrational peaks of the synthesized product (characteristics Si-C bonds) were observed at around 1076 cm −1 (FTIR analysis). At the same time, the outcomes were compared with major publications in the literature.
ISSN:1073-5623
1543-1940
DOI:10.1007/s11661-017-4050-9