Field Effect Transistor Based on a Modified DNA Base

In this work, a field effect transistor based on a deoxyguanosine derivative (a DNA base) is demonstrated. Our experiments on transport through the source and drain electrodes interconnected by self-assembled guanine ribbons (Gottarelli et al. Helv. Chim. Acta 1998, 81, 2078; Gottarelli et al. Chem....

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Bibliographic Details
Published in:Nano letters 2003-04, Vol.3 (4), p.479-483
Main Authors: Maruccio, Giuseppe, Visconti, Paolo, Arima, Valentina, D'Amico, Stefano, Biasco, Adriana, D'Amone, Eliana, Cingolani, Roberto, Rinaldi, Ross, Masiero, Stefano, Giorgi, Tatiana, Gottarelli, Giovanni
Format: Article
Language:English
Subjects:
Applied sciences
deoxyguanosine
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In this work, a field effect transistor based on a deoxyguanosine derivative (a DNA base) is demonstrated. Our experiments on transport through the source and drain electrodes interconnected by self-assembled guanine ribbons (Gottarelli et al. Helv. Chim. Acta 1998, 81, 2078; Gottarelli et al. Chem. Eur. J. 2000, 6, 3242; Giorgi et al. Chem Eur. J. 2002, 8, 2143) suggest that these devices behave like p-channel MOSFETs. The devices exhibit a maximum voltage gain of 0.76. This prototype transistor represents a starting point toward the development of biomolecular electronic devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl034046c