A novel silicon nitride biosensor for specific antibody–antigen interaction

We herein report the fabrication and characterisation of a novel impedimetric immunosensor based on an electrolyte–insulator–semiconductor (EIS) structure. It is a silicon nitride/aminosilane/glutaraldehyde/antibody biosensor specifically designed for the detection of antigens. This immunosensor was...

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Bibliographic Details
Published in:Materials Science & Engineering C 2005-06, Vol.25 (4), p.490-495
Main Authors: Tlili, A., Jarboui, M. Ali, Abdelghani, A., Fathallah, D.M., Maaref, M.A.
Format: Article
Language:English
Subjects:
Antibody
Antigen
Biosensors
FTIR
Impedance spectroscopy
Protein
Self-assembled monolayer
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Summary:We herein report the fabrication and characterisation of a novel impedimetric immunosensor based on an electrolyte–insulator–semiconductor (EIS) structure. It is a silicon nitride/aminosilane/glutaraldehyde/antibody biosensor specifically designed for the detection of antigens. This immunosensor was fabricated following the Self-Assembled Monolayers (SAMs) method, followed by glutaraldehyde cross linker and anti-rabbit IgG immobilization. The high coverage area of the silane monolayer on silicon nitride surface was estimated with impedance spectroscopy technique and the molecular structure with Fourier-transform infrared (FTIR) technique. The binding between antibody and antigen (Rabbit IgG) was monitored by measuring the resistance variation of the grafted layer. The developed immunosensor has a limit detection of 50 ng/ml of antigen.
ISSN:0928-4931
1873-0191
DOI:10.1016/j.msec.2005.02.001