Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence (PL). The ion implantation is performed at the energy of 120 keV with the dose ranging from 1X1011 to 1X1014/cm2. The rapid thermal annealing is performed at...

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Bibliographic Details
Published in:Chinese physics letters 2006-04, Vol.23 (4), p.919-921
Main Authors: Jie, Zhao, Jie, Chen, Yong-Chen, Wang, De-Jun, Han
Format: Article
Language:English
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Summary:We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence (PL). The ion implantation is performed at the energy of 120 keV with the dose ranging from 1X1011 to 1X1014/cm2. The rapid thermal annealing is performed at the temperature of 700°C for 30 s under pure nitrogen protection. The PL measurement shows that the band gap blueshift is influenced by the depth of ion implantation. The blueshift of the upper well which is closer to the implanted vacancies is enhanced with the ion dose faster than that from a lower well under the lower dose implantation (
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/23/4/043