Yellow and red luminescence in Mg-implanted GaN epitaxial films

X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemica...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2007-11, Vol.264 (1), p.41-46
Main Authors: Wei, You, Xiao-Dong, Zhang, Li-Min, Zhang, Zhen, Yang, Hai, Bian, Zheng-Min, Liu
Format: Article
Language:English
Subjects:
Gallium nitride (GaN)
Infrared spectra
Ion implantation
Photoluminescence spectra
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Summary:X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. The influence of different Mg-implanted fluences on yellow and red luminescence was studied. The as-grown GaN thin films exhibited intense broad yellow emission which reduces drastically after Mg ion implantation. A red luminescence band at approximately 750nm appears when the Mg implantation fluence is low (1013cm−2) whereas a yellow luminescence band suddenly increases at a Mg-implanted fluence of 1016cm−2. The possible reasons of these phenomena are discussed.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2007.07.023