Branched Hydrosilane Oligomers as Ideal Precursors for Liquid‐Based Silicon‐Film Deposition

Herein a convenient synthetic method to obtain 2,2,3,3‐tetrasilyltetrasilane 3 and 2,2,3,3,4,4‐hexasilylpentasilane 4 on a multigram scale is presented. Proton‐coupled 29Si NMR spectroscopy and single‐crystal X‐ray crystallography enabled unequivocal structural assignment. Owing to their unique prop...

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Published in:Angewandte Chemie International Edition 2017-11, Vol.56 (45), p.14071-14074
Main Authors: Haas, Michael, Christopoulos, Viktor, Radebner, Judith, Holthausen, Michael, Lainer, Thomas, Schuh, Lukas, Fitzek, Harald, Kothleitner, Gerald, Torvisco, Ana, Fischer, Roland, Wunnicke, Odo, Stueger, Harald
Format: Article
Language:English
Subjects:
Amorphous silicon
Crystal structure
Crystallography
Deposition
Electromagnetic absorption
Ellipsometry
Microscopy
oligomerization
Oligomers
Optical microscopy
Precursors
Raman spectroscopy
silanes
Silicon
Silicon films
Single crystals
Spectroscopy
Spectrum analysis
Thin films
UV/Vis spectroscopy
X-ray crystallography
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Summary:Herein a convenient synthetic method to obtain 2,2,3,3‐tetrasilyltetrasilane 3 and 2,2,3,3,4,4‐hexasilylpentasilane 4 on a multigram scale is presented. Proton‐coupled 29Si NMR spectroscopy and single‐crystal X‐ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid‐phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a‐Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy. Higher silanes with eight or more silicon atoms were synthesized on a multigram scale by a convenient synthetic method. Owing to their unique properties, including their nonpyrophoric nature when in contact with air and their enhanced light absorption above 250 nm, these silanes were found to be excellent precursors for the deposition of silicon films from solution (see picture).
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201707525