Influence of the implantation and annealing parameters on the photoluminescence produced by Si hot implantation

We report an investigation on the effect of the fluence and annealing time on the photoluminescence (PL) from Si nanocrystals produced by hot implantation of Si into a SiO2 matrix followed by thermal treatment in nitrogen. We have varied the implantation fluence in a wide range, from 0.35×1017 to 4×...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.51-55
Main Authors: Sias, U.S., Behar, M., Boudinov, H., Moreira, E.C.
Format: Article
Language:English
Subjects:
Hot implantation
Photoluminescence
Silicon nanocrystals
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Summary:We report an investigation on the effect of the fluence and annealing time on the photoluminescence (PL) from Si nanocrystals produced by hot implantation of Si into a SiO2 matrix followed by thermal treatment in nitrogen. We have varied the implantation fluence in a wide range, from 0.35×1017 to 4×1017Si/cm2. In addition, the PL evolution with the annealing time (1 up to 15h) was studied for the samples implanted with fluences between 1×1017 and 4×1017Si/cm2. After annealing the spectra present two PL bands: one centered at 780nm and a second one around 1000nm. The influence of the studied parameters on the PL behavior of both bands suggests different origins for their emission. The results are discussed in terms of current models.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2006.12.114