Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga O ) thin films using hexakis(dimethylamido)digallium [Ga(NMe ) ] with oxygen (O ) plasma on Si(100). The use of O plasma was found to have a significant improveme...

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Bibliographic Details
Published in:Dalton transactions : an international journal of inorganic chemistry 2017, Vol.46 (47), p.16551-16561
Main Authors: O'Donoghue, Richard, Rechmann, Julian, Aghaee, Morteza, Rogalla, Detlef, Becker, Hans-Werner, Creatore, Mariadriana, Wieck, Andreas Dirk, Devi, Anjana
Format: Article
Language:English
Subjects:
Atomic force microscopy
Atomic layer epitaxy
Backscattering
Densification
Ellipsometry
Gallium oxides
Grazing incidence
Low temperature
Plasma
Polyethylene terephthalate
Roughening
Spectrum analysis
Substrate inhibition
Thin films
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Summary:Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga O ) thin films using hexakis(dimethylamido)digallium [Ga(NMe ) ] with oxygen (O ) plasma on Si(100). The use of O plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga O processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga O ALD and the lowest temperature to date for the ALD growth of Ga O and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga O thin films of high purity (carbon and nitrogen
ISSN:1477-9226
1477-9234
DOI:10.1039/c7dt03427j