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Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition
Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga O ) thin films using hexakis(dimethylamido)digallium [Ga(NMe ) ] with oxygen (O ) plasma on Si(100). The use of O plasma was found to have a significant improveme...
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| Published in: | Dalton transactions : an international journal of inorganic chemistry 2017, Vol.46 (47), p.16551-16561 |
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| Main Authors: | , , , , , , , |
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| cites | cdi_FETCH-LOGICAL-c381t-4b836536ebc9e9801568a9fa1fa6e7b05888123331cbda2ab9ca21390a273bef3 |
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| container_issue | 47 |
| container_start_page | 16551 |
| container_title | Dalton transactions : an international journal of inorganic chemistry |
| container_volume | 46 |
| creator | O'Donoghue, Richard Rechmann, Julian Aghaee, Morteza Rogalla, Detlef Becker, Hans-Werner Creatore, Mariadriana Wieck, Andreas Dirk Devi, Anjana |
| description | Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga
O
) thin films using hexakis(dimethylamido)digallium [Ga(NMe
)
]
with oxygen (O
) plasma on Si(100). The use of O
plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga
O
processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga
O
ALD and the lowest temperature to date for the ALD growth of Ga
O
and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga
O
thin films of high purity (carbon and nitrogen |
| doi_str_mv | 10.1039/c7dt03427j |
| format | article |
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O
) thin films using hexakis(dimethylamido)digallium [Ga(NMe
)
]
with oxygen (O
) plasma on Si(100). The use of O
plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga
O
processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga
O
ALD and the lowest temperature to date for the ALD growth of Ga
O
and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga
O
thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline β-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of Ga
O
thin films and provides the means to deposit Ga
O
upon thermally sensitive polymers like polyethylene terephthalate.</description><identifier>ISSN: 1477-9226</identifier><identifier>EISSN: 1477-9234</identifier><identifier>DOI: 10.1039/c7dt03427j</identifier><identifier>PMID: 29160880</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Atomic force microscopy ; Atomic layer epitaxy ; Backscattering ; Densification ; Ellipsometry ; Gallium oxides ; Grazing incidence ; Low temperature ; Plasma ; Polyethylene terephthalate ; Roughening ; Spectrum analysis ; Substrate inhibition ; Thin films</subject><ispartof>Dalton transactions : an international journal of inorganic chemistry, 2017, Vol.46 (47), p.16551-16561</ispartof><rights>Copyright Royal Society of Chemistry 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-4b836536ebc9e9801568a9fa1fa6e7b05888123331cbda2ab9ca21390a273bef3</citedby><cites>FETCH-LOGICAL-c381t-4b836536ebc9e9801568a9fa1fa6e7b05888123331cbda2ab9ca21390a273bef3</cites><orcidid>0000-0003-2142-8105 ; 0000-0002-5404-2498 ; 0000-0002-9022-6366 ; 0000-0001-9776-2922</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/29160880$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>O'Donoghue, Richard</creatorcontrib><creatorcontrib>Rechmann, Julian</creatorcontrib><creatorcontrib>Aghaee, Morteza</creatorcontrib><creatorcontrib>Rogalla, Detlef</creatorcontrib><creatorcontrib>Becker, Hans-Werner</creatorcontrib><creatorcontrib>Creatore, Mariadriana</creatorcontrib><creatorcontrib>Wieck, Andreas Dirk</creatorcontrib><creatorcontrib>Devi, Anjana</creatorcontrib><title>Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition</title><title>Dalton transactions : an international journal of inorganic chemistry</title><addtitle>Dalton Trans</addtitle><description>Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga
O
) thin films using hexakis(dimethylamido)digallium [Ga(NMe
)
]
with oxygen (O
) plasma on Si(100). The use of O
plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga
O
processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga
O
ALD and the lowest temperature to date for the ALD growth of Ga
O
and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga
O
thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline β-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of Ga
O
thin films and provides the means to deposit Ga
O
upon thermally sensitive polymers like polyethylene terephthalate.</description><subject>Atomic force microscopy</subject><subject>Atomic layer epitaxy</subject><subject>Backscattering</subject><subject>Densification</subject><subject>Ellipsometry</subject><subject>Gallium oxides</subject><subject>Grazing incidence</subject><subject>Low temperature</subject><subject>Plasma</subject><subject>Polyethylene terephthalate</subject><subject>Roughening</subject><subject>Spectrum analysis</subject><subject>Substrate inhibition</subject><subject>Thin films</subject><issn>1477-9226</issn><issn>1477-9234</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNpdkMlOwzAURS0EoqWw4QOQJTYIqeAhdewlKrMqsYEt0YvzQl0lcbAdhr-njAtW9y6Orq4OIfucnXAmzanNq8RkJvLVBhnzLM-nRshs868LNSI7Ma4YE4LNxDYZCcMV05qNyePCv9KEbY8B0hCQPgX_mpbU1_QJmsYNLfVvrkKalq6jtWvaSF8c0L6B2ALFbgmdxYpC8q2ztIF3DLTC3keXnO92yVYNTcS9n5yQh8uL-_n1dHF3dTM_W0yt1DxNs1JLNZMKS2vQaMZnSoOpgdegMC_ZTGvNhZSS27ICAaWxILg0DEQuS6zlhBx97_bBPw8YU9G6aLFpoEM_xIIbpYwW2VrMhBz-Q1d-CN36XSEYZ1rlRn1Sx9-UDT7GgHXRB9dCeC84Kz6tF_P8_P7L-u0aPviZHMoWqz_0V7P8AG3BfQE</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>O'Donoghue, Richard</creator><creator>Rechmann, Julian</creator><creator>Aghaee, Morteza</creator><creator>Rogalla, Detlef</creator><creator>Becker, Hans-Werner</creator><creator>Creatore, Mariadriana</creator><creator>Wieck, Andreas Dirk</creator><creator>Devi, Anjana</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-2142-8105</orcidid><orcidid>https://orcid.org/0000-0002-5404-2498</orcidid><orcidid>https://orcid.org/0000-0002-9022-6366</orcidid><orcidid>https://orcid.org/0000-0001-9776-2922</orcidid></search><sort><creationdate>2017</creationdate><title>Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition</title><author>O'Donoghue, Richard ; Rechmann, Julian ; Aghaee, Morteza ; Rogalla, Detlef ; Becker, Hans-Werner ; Creatore, Mariadriana ; Wieck, Andreas Dirk ; Devi, Anjana</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-4b836536ebc9e9801568a9fa1fa6e7b05888123331cbda2ab9ca21390a273bef3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Atomic force microscopy</topic><topic>Atomic layer epitaxy</topic><topic>Backscattering</topic><topic>Densification</topic><topic>Ellipsometry</topic><topic>Gallium oxides</topic><topic>Grazing incidence</topic><topic>Low temperature</topic><topic>Plasma</topic><topic>Polyethylene terephthalate</topic><topic>Roughening</topic><topic>Spectrum analysis</topic><topic>Substrate inhibition</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>O'Donoghue, Richard</creatorcontrib><creatorcontrib>Rechmann, Julian</creatorcontrib><creatorcontrib>Aghaee, Morteza</creatorcontrib><creatorcontrib>Rogalla, Detlef</creatorcontrib><creatorcontrib>Becker, Hans-Werner</creatorcontrib><creatorcontrib>Creatore, Mariadriana</creatorcontrib><creatorcontrib>Wieck, Andreas Dirk</creatorcontrib><creatorcontrib>Devi, Anjana</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Dalton transactions : an international journal of inorganic chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>O'Donoghue, Richard</au><au>Rechmann, Julian</au><au>Aghaee, Morteza</au><au>Rogalla, Detlef</au><au>Becker, Hans-Werner</au><au>Creatore, Mariadriana</au><au>Wieck, Andreas Dirk</au><au>Devi, Anjana</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition</atitle><jtitle>Dalton transactions : an international journal of inorganic chemistry</jtitle><addtitle>Dalton Trans</addtitle><date>2017</date><risdate>2017</risdate><volume>46</volume><issue>47</issue><spage>16551</spage><epage>16561</epage><pages>16551-16561</pages><issn>1477-9226</issn><eissn>1477-9234</eissn><abstract>Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga
O
) thin films using hexakis(dimethylamido)digallium [Ga(NMe
)
]
with oxygen (O
) plasma on Si(100). The use of O
plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga
O
processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga
O
ALD and the lowest temperature to date for the ALD growth of Ga
O
and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga
O
thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline β-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of Ga
O
thin films and provides the means to deposit Ga
O
upon thermally sensitive polymers like polyethylene terephthalate.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>29160880</pmid><doi>10.1039/c7dt03427j</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-2142-8105</orcidid><orcidid>https://orcid.org/0000-0002-5404-2498</orcidid><orcidid>https://orcid.org/0000-0002-9022-6366</orcidid><orcidid>https://orcid.org/0000-0001-9776-2922</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1477-9226 |
| ispartof | Dalton transactions : an international journal of inorganic chemistry, 2017, Vol.46 (47), p.16551-16561 |
| issn | 1477-9226 1477-9234 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1966982492 |
| source | Royal Society of Chemistry |
| subjects | Atomic force microscopy Atomic layer epitaxy Backscattering Densification Ellipsometry Gallium oxides Grazing incidence Low temperature Plasma Polyethylene terephthalate Roughening Spectrum analysis Substrate inhibition Thin films |
| title | Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition |
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