Black‐Phosphorus‐Based Orientation‐Induced Diodes

Despite many decades of research of diodes, which are fundamental components of electronic and photoelectronic devices with p–n or Schottky junctions using bulk or 2D materials, stereotyped architectures and complex technological processing (doping and multiple material operations) have limited futu...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2018-01, Vol.30 (2), p.n/a
Main Authors: Xin, Wei, Li, Xiao‐Kuan, He, Xin‐Ling, Su, Bao‐Wang, Jiang, Xiao‐Qiang, Huang, Kai‐Xuan, Zhou, Xiang‐Feng, Liu, Zhi‐Bo, Tian, Jian‐Guo
Format: Article
Language:English
Subjects:
anisotropy
Band theory
black phosphorus
Charge transport
Crystal structure
Diodes
Electronic devices
energy band theory
Optoelectronic devices
orientation barrier
Phosphorus
Photoelectric effect
Photoelectric emission
Vertical orientation
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Summary:Despite many decades of research of diodes, which are fundamental components of electronic and photoelectronic devices with p–n or Schottky junctions using bulk or 2D materials, stereotyped architectures and complex technological processing (doping and multiple material operations) have limited future development. Here, a novel rectification device, an orientation‐induced diode, assembled using only few‐layered black phosphorus (BP) is investigated. The key to its realization is to utilize the remarkable anisotropy of BP in low dimensions and change the charge‐transport conditions abruptly along the different crystal orientations. Rectification ratios of 6.8, 22, and 115 can be achieved in cruciform BP, cross‐stacked BP junctions, and BP junctions stacked with vertical orientations, respectively. The underlying physical processes and mechanisms can be explained using “orientation barrier” band theory. The theoretical results are experimentally confirmed using localized scanning photocurrent imaging. These orientation‐induced optoelectronic devices open possibilities for 2D anisotropic materials with a new degree of freedom to improve modulation in diodes. Orientation‐induced diodes assembled using only few‐layered black phosphorus (BP) materials are developed as novel rectification devices. The key to its realization is to utilize the remarkable anisotropy of BP in low dimensions and change the charge‐transport conditions abruptly along the different crystal orientations. These devices can open possibilities for two‐dimensional anisotropic materials to improve modulation in diodes.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201704653