Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to dr...

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Bibliographic Details
Published in:Nature materials 2018-01, Vol.17 (1), p.49-56
Main Authors: Jiang, Jun, Bai, Zi Long, Chen, Zhi Hui, He, Long, Zhang, David Wei, Zhang, Qing Hua, Shi, Jin An, Park, Min Hyuk, Scott, James F., Hwang, Cheol Seong, Jiang, An Quan
Format: Article
Language:English
Subjects:
639/925/357/995
639/925/927/1007
Biomaterials
Bismuth compounds
Condensed Matter Physics
Data storage
Defects
Digital data
Domain walls
Electric potential
Ferroelectric materials
Ferroelectricity
Film thickness
Magnetic fields
Magnetism
Materials Science
Memory devices
Nanotechnology
Optical and Electronic Materials
Stability
Thin films
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Summary:Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO 3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm. An in-plane memory device based on multidomain BiFeO 3 thin films is reported. Highly conductive domain walls appear only during the application of a read-out field, a non-destructive process that reduces accumulation of mobile defects on the walls.
ISSN:1476-1122
1476-4660
DOI:10.1038/nmat5028