Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. W...

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Bibliographic Details
Published in:Optics letters 2017-12, Vol.42 (23), p.5030-5033
Main Authors: Koskinen, K, Czaplicki, R, Slablab, A, Ning, T, Hermans, A, Kuyken, B, Mittal, V, Murugan, G S, Niemi, T, Baets, R, Kauranen, M
Format: Article
Language:English
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Summary:We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.42.005030