Tri-layer silicon nitride-on-silicon photonic platform for ultra-low-loss crossings and interlayer transitions

We present a three-layer silicon nitride on silicon platform for constructing very large photonic integrated circuits. Efficient interlayer transitions are enabled by the close spacing between adjacent layers, while ultra-low-loss crossings are enabled by the large spacing between the topmost and bo...

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Bibliographic Details
Published in:Optics express 2017-12, Vol.25 (25), p.30862-30875
Main Authors: Sacher, Wesley D, Mikkelsen, Jared C, Dumais, Patrick, Jiang, Jia, Goodwill, Dominic, Luo, Xianshu, Huang, Ying, Yang, Yisu, Bois, Antoine, Lo, Patrick Guo-Qiang, Bernier, Eric, Poon, Joyce K S
Format: Article
Language:English
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Summary:We present a three-layer silicon nitride on silicon platform for constructing very large photonic integrated circuits. Efficient interlayer transitions are enabled by the close spacing between adjacent layers, while ultra-low-loss crossings are enabled by the large spacing between the topmost and bottommost layers. We demonstrate interlayer taper transitions with losses < 0.15 dB for wavelengths spanning from 1480 nm to 1620 nm. Our overpass waveguide crossings exhibit insertion loss < 2.1 mdB and crosstalk below -56 dB in the wavelength range between 1480 nm and 1620 nm with losses as low as 0.28 mdB. Our platform architecture is suited to meet the demands of large-scale photonic circuits which contain hundreds of crossings.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.25.030862