Efficient Red/Green/Blue Tandem Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency Exceeding 21

• Published in: ACS nano 2018-01, Vol.12 (1), p.697-704
• Main Authors: Zhang, Heng, Chen, Shuming, Sun, Xiao Wei
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.7b07867

Highly efficient tandem quantum-dot light-emitting diodes (QLEDs) are developed by using an interconnecting layer (ICL) with the structure of ZnMgO/Al/HATCN/MoO3. The developed ICL exhibits high transparency, efficient charge generation/injection capability, and high robustness to resist solvent damage during deposition of the upper functional layers. With the proposed ICL, full color (red/green/blue, R/G/B) tandem QLEDs are demonstrated with extremely high current efficiency and external quantum efficiency (EQE): 17.9 cd/A and 21.4% for B-QLEDs, 121.5 cd/A and 27.6% for G-QLEDs, 41.5 cd/A and 23.1% for R-QLEDs. To the best of our knowledge, these are the highest values ever reported. In addition, the EQEs of R-, G-, and B-QLEDs all exceed 21%. The high efficiency can be well maintained over a wide range of luminance from 102 to 104 cd/m2. For example, even at a high brightness of 20 000 cd/m2, the EQE of R-, G-, and B-QLEDs can still sustain its 96%, 99%, and 78% maximum value, respectively. The demonstrated full-color tandem QLEDs, with extremely high efficiency, long operational lifetime, low roll-off efficiency, and high color purity, would be ideal candidates to bring QLEDs into the next generation of full-color displays and the solid-state lighting market.