Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply

We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment," [Opt. Express22, A1589 (2014)].

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Bibliographic Details
Published in:Optics express 2018-01, Vol.26 (2), p.A110-A110
Main Authors: Lee, Ya-Ju, Yang, Zu-Po, Chen, Pin-Guang, Hsieh, Yung-An, Yao, Yung-Chi, Liao, Ming-Han, Lee, Min-Hung, Wang, Mei-Tan, Hwang, Jung-Min
Format: Article
Language:English
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Summary:We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment," [Opt. Express22, A1589 (2014)].
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.26.00A110