The Effect of Random and Block Copolymerization with Pendent Carbozole Donors and Naphthalimide Acceptors on Multilevel Memory Performance

Polymeric materials have been widely used in the fabrication of data‐storage devices, owing to their unique advantages and defined conduction mechanisms. To date, the most‐functional polymers that have been reported for memory devices were synthesized through random copolymerization, whilst there ha...

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Bibliographic Details
Published in:Chemistry, an Asian journal an Asian journal, 2018-04, Vol.13 (7), p.853-860
Main Authors: Zhang, Qi‐jian, Zhou, Jia‐hui, Li, Hui, He, Jing‐hui, Li, Na‐jun, Xu, Qing‐feng, Chen, Dong‐yun, Li, Hua, Lu, Jian‐mei
Format: Article
Language:English
Subjects:
Block copolymers
Chemical synthesis
Chemistry
conducting materials
Copolymerization
Copolymers
Data storage
Electronic devices
Memory devices
molecular stacking
nitrogen heterocycles
Polymers
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Summary:Polymeric materials have been widely used in the fabrication of data‐storage devices, owing to their unique advantages and defined conduction mechanisms. To date, the most‐functional polymers that have been reported for memory devices were synthesized through random copolymerization, whilst there have been no reports regarding the memory effect of block polymers. Herein, we synthesized a random copolymer (PMCz8‐co‐PMBNa2) and its corresponding block copolymer (PMCz8‐b‐PMBNa2) to study the effect of the method of polymerization on the memory properties of the corresponding devices. Interestingly, both devices (ITO/PMCz8‐co‐PMBNa2/Al and ITO/PMCz8‐b‐PMBNa2/Al) exhibited ternary memory performance, with threshold voltages of −1.7 V/−3.3 V and −2.7 V/−3.8 V, respectively. However, based on comprehensive measurements, the memory properties of PMCz8‐co‐PMBNa2 and PMCz8‐b‐PMBNa2 were found to be owing to the operation of different conduction mechanisms, which resulted from different molecular stacking in the film state. Therefore, we expect that this work will be helpful for improving our understanding of the conduction mechanisms in polymer‐based data‐storage devices. Thanks for the memories: Two copolymers, PMCz8‐co‐PMBNa2 and PMCz8‐b‐PMBNa2, were synthesized through random and block copolymerization, respectively. Their corresponding data‐storage devices exhibited different memory properties, which was attributed to the operation of different conduction mechanisms.
ISSN:1861-4728
1861-471X
DOI:10.1002/asia.201701778