Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells

We tune the Fermi level alignment between the SnO x electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb­(I0.83Br0.17)3 and highlight that this parameter is interlinked with current–voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements r...

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Published in:ACS applied materials & interfaces 2018-04, Vol.10 (14), p.11414-11419
Main Authors: Aygüler, Meltem F, Hufnagel, Alexander G, Rieder, Philipp, Wussler, Michael, Jaegermann, Wolfram, Bein, Thomas, Dyakonov, Vladimir, Petrus, Michiel L, Baumann, Andreas, Docampo, Pablo
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cited_by cdi_FETCH-LOGICAL-a370t-842535747234ecf8d1027c71cd0f0b76cbe77d4eef7d879006eab8973d4e1c5d3
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container_end_page 11419
container_issue 14
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container_title ACS applied materials & interfaces
container_volume 10
creator Aygüler, Meltem F
Hufnagel, Alexander G
Rieder, Philipp
Wussler, Michael
Jaegermann, Wolfram
Bein, Thomas
Dyakonov, Vladimir
Petrus, Michiel L
Baumann, Andreas
Docampo, Pablo
description We tune the Fermi level alignment between the SnO x electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb­(I0.83Br0.17)3 and highlight that this parameter is interlinked with current–voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL–perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge collection efficiency adversely, which increases the hysteresis of PSCs.
doi_str_mv 10.1021/acsami.8b00990
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title Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells
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