Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

In this study, InSb p-i-n photodetectors with In Al Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. T...

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Bibliographic Details
Published in:Optics express 2018-03, Vol.26 (6), p.7227-7234
Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
Format: Article
Language:English
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Summary:In this study, InSb p-i-n photodetectors with In Al Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In Al Sb barrier layer increased the 77 K R A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 10 cmHz W at 5.3 µm.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.26.007227