450 nm (Al,In)GaN optical amplifier with double 'j-shape' waveguide for master oscillator power amplifier systems

In this paper we demonstrate 450 nm (Al,In)GaN graded index separate confinement heterostructure travelling wave optical amplifier with a double 'j-shape' waveguide. The length of the amplifier is 2.5 mm and the width of the ridge is 2.5 µm. The active region consists of three 3.5 nm thick...

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Bibliographic Details
Published in:Optics express 2018-03, Vol.26 (6), p.7351-7357
Main Authors: Stanczyk, Szymon, Kafar, Anna, Grzanka, Szymon, Sarzynski, Marcin, Mroczynski, Robert, Najda, Steve, Suski, Tadeusz, Perlin, Piotr
Format: Article
Language:English
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Summary:In this paper we demonstrate 450 nm (Al,In)GaN graded index separate confinement heterostructure travelling wave optical amplifier with a double 'j-shape' waveguide. The length of the amplifier is 2.5 mm and the width of the ridge is 2.5 µm. The active region consists of three 3.5 nm thick quantum wells. The measured optical gain under CW operation in room temperature exceeded 29 dB for low power input signals. The saturation output power was 21 dBm for 400 mA driving current. The demonstrated amplifier, provides a good solution for the blue light, all nitrides, and master oscillator power amplifier systems.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.26.007351