Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy

This paper describes the observation of band bending and band edge shifts at the interfaces between nanoscale metals and TiO2 film over a wide depth range by angular-resolved hard X-ray photoemission spectroscopy (HAXPES). The HAXPES results indicate strong electrostatic interactions between the TiO...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2018, Vol.20 (16), p.11342-11346
Main Authors: Sato, Shunsuke, Kataoka, Keita, Jinnouchi, Ryosuke, Takahashi, Naoko, Sekizawa, Keita, Kitazumi, Kousuke, Ikenaga, Eiji, Asahi, Ryoji, Morikawa, Takeshi
Format: Article
Language:English
Subjects:
Charge transfer
Density functional theory
Dipole moments
Electric dipoles
Gold
Nanoparticles
Photoelectric emission
Photoelectron spectroscopy
Spectrum analysis
Titanium dioxide
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Summary:This paper describes the observation of band bending and band edge shifts at the interfaces between nanoscale metals and TiO2 film over a wide depth range by angular-resolved hard X-ray photoemission spectroscopy (HAXPES). The HAXPES results indicate strong electrostatic interactions between the TiO2 semiconductor and metal nanoparticles, while density functional theory (DFT) calculations suggest that these interactions are primarily associated with charge transfer leading to electric dipole moments at the interface in the ground state. The effects of these dipole moments are not limited to the surface but also occur deep in the bulk of the semiconductor, and are highly dependent on the coverage of the metal nanoparticles on the semiconductor species.
ISSN:1463-9076
1463-9084
DOI:10.1039/c8cp00551f