Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates

Controlling the growth direction (planar versus vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport...

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Bibliographic Details
Published in:Nanotechnology 2018-08, Vol.29 (31), p.315706-315706
Main Authors: Li, Mingze, Wang, Zhenhua, Yang, Liang, Pan, Desheng, Li, Da, Gao, Xuan P A, Zhang, Zhidong
Format: Article
Language:English
Subjects:
thin film
vertical growth
weak antilocalization
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Summary:Controlling the growth direction (planar versus vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi2Se3 nanoplate film, vertical Bi2Se3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi2Se3 nanoplates, we realized an effective tuning of the weak antilocalization effect from topological surface states in Bi2Se3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aac457