Intervalley Scattering of Interlayer Excitons in a MoS2/MoSe2/MoS2 Heterostructure in High Magnetic Field

Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides....

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Bibliographic Details
Published in:Nano letters 2018-06, Vol.18 (6), p.3994-4000
Main Authors: Surrente, Alessandro, Kłopotowski, Łukasz, Zhang, Nan, Baranowski, Michal, Mitioglu, Anatolie A, Ballottin, Mariana V, Christianen, Peter C.M, Dumcenco, Dumitru, Kung, Yen-Cheng, Maude, Duncan K, Kis, Andras, Plochocka, Paulina
Format: Article
Language:English
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Summary:Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarization and depolarization mechanisms of interlayer excitons formed across a MoS2/MoSe2/MoS2 heterostructure. We account for the nontrivial behavior of the valley polarization as a function of the magnetic field by considering the interplay between exchange interaction and phonon-mediated intervalley scattering in a system consisting of Zeeman-split energy levels. Our results represent a crucial step toward the understanding of the properties of interlayer excitons with strong implications for the implementation of atomically thin valleytronic devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.8b01484