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Effect of occupational safety measures on micronucleus frequency in semiconductor workers

Objectives To examine whether semiconductor workers exposed to complex mixtures of chemical waste show an increase in genotoxic effects, and, if so, whether occupational safety measures protect these workers. Methods To assess chemical exposure in the workplace, air monitoring of boron trifluoride a...

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Bibliographic Details
Published in:International archives of occupational and environmental health 2008-02, Vol.81 (4), p.423-428
Main Authors: Winker, Robert, Roos, Gerhard, Pilger, Alexander, Rüdiger, Hugo W.
Format: Article
Language:English
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Summary:Objectives To examine whether semiconductor workers exposed to complex mixtures of chemical waste show an increase in genotoxic effects, and, if so, whether occupational safety measures protect these workers. Methods To assess chemical exposure in the workplace, air monitoring of boron trifluoride and boron trichloride was performed and urinary concentrations of fluoride were measured. The cytokinesis-block micronucleus test on isolated lymphocytes was used for the detection of genotoxic effects. Two series of monitoring have been performed in order to assess the effect of implemented protection measures. Results We found a significantly higher mean frequency of micronuclei in exposed workers than in controls, whereas air monitoring and measurement of urinary fluoride failed to detect chemical exposure of these workers. Twelve years after implementation of protective measures, the mean level of micronuclei in exposed individuals was found to be as low as those from controls. Conclusions These findings indicate that exposed workers in the semiconductor industry may have an increased risk of genotoxic effects from complex mixtures of chemical waste products. The decline of the mean level of micronuclei in exposed workers down to the base level of controls after implementation of protective measures points to the significance of adequate safety standards to protect against chromosomal damage in semiconductor personnel.
ISSN:0340-0131
1432-1246
DOI:10.1007/s00420-007-0229-5