Room‐Temperature Solution‐Synthesized p‐Type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics

• Published in: Advanced materials (Weinheim) 2018-08, Vol.30 (34), p.e1802379-n/a
• Main Authors: Liu, Ao, Zhu, Huihui, Park, Won‐Tae, Kang, Seok‐Ju, Xu, Yong, Kim, Myung‐Gil, Noh, Yong‐Young
• Format: Article
• Language: English
• Subjects: Copper; Cuprous iodide; Electric potential; Electronics; Gallium; Hole mobility; Indium gallium zinc oxide; Inks; inorganic p‐type semiconductor; low voltage; Materials science; Room temperature; room‐temperature synthesis; Semiconductor devices; Silicon dioxide; solution process; thin‐film transistor; Transistors; Voltage gain; Zinc oxide; Zirconium dioxide
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.201802379

Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility (µFE) of 0.44 cm2 V−1 s−1 and on/off current ratio of 5 × 102. Furthermore, µFE increases to 1.93 cm2 V−1 s−1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO2 dielectric layer replacing traditional SiO2. Transparent complementary inverters composed of p‐type CuI and n‐type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution‐processed inorganic p‐type semiconductor inks and related electronics. Room‐temperature solution‐processed p‐type copper iodide (CuI) thin‐film transistors (TFTs) are demonstrated for the first time with high hole mobility of 1.93 cm2 V‐1 s‐1 and on/off current ratio of 5 × 102. Transparent complementary inverters composed of p‐type CuI and n‐type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4.