A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity,...

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Bibliographic Details
Published in:Applied radiation and isotopes 2009-07, Vol.67 (7), p.1204-1207
Main Authors: Ha, Jang Ho, Kang, Sang Mook, Park, Se Hwan, Kim, Han Soo, Lee, Nam Ho, Song, Tae-Yung
Format: Article
Language:English
Subjects:
Carbon Compounds, Inorganic
Equipment Design
Neutron measurement
Neutrons
Radiation Monitoring - instrumentation
Semiconductor
Semiconductors
Silicon carbide
Silicon Compounds
Solid-state detector
Surface barrier detector
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Summary:Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity, a radiation detector having a low-power consumption, a mechanical stability and a radiation hardness is required. Our research was focused on the development of a radiation-resistive neutron semiconductor detector based on a wide band-gap SiC semiconductor. And also it will be operated at a zero-biased voltage using a strong internal electric field. The charge collection efficiency (CCE) was over 80% when the biased voltage was zero. When the biased voltage was applied above 20 V, the charge collection efficiency reached 100%.
ISSN:0969-8043
1872-9800
DOI:10.1016/j.apradiso.2009.02.013