Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries

The unique combination of atomic-scale composition measurements, employing atom probe tomography, atomic structure determination with picometer resolution by aberration-corrected scanning transmission electron microscopy, and atomistic simulations reveals site-specific linear segregation features at...

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Bibliographic Details
Published in:Physical review letters 2018-07, Vol.121 (1), p.015702-015702, Article 015702
Main Authors: Liebscher, Christian H, Stoffers, Andreas, Alam, Masud, Lymperakis, Liverios, Cojocaru-Mirédin, Oana, Gault, Baptiste, Neugebauer, Jörg, Dehm, Gerhard, Scheu, Christina, Raabe, Dierk
Format: Article
Language:English
Subjects:
Asymmetry
Atomic structure
Decoration
Grain boundaries
Patterning
Planes
Scanning electron microscopy
Scanning transmission electron microscopy
Transmission electron microscopy
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Summary:The unique combination of atomic-scale composition measurements, employing atom probe tomography, atomic structure determination with picometer resolution by aberration-corrected scanning transmission electron microscopy, and atomistic simulations reveals site-specific linear segregation features at grain boundary facet junctions. More specific, an asymmetric line segregation along one particular type of facet junction core, instead of a homogeneous decoration of the facet planes, is observed. Molecular-statics calculations show that this segregation pattern is a consequence of the interplay between the asymmetric core structure and its corresponding local strain state. Our results contrast with the classical view of a homogeneous decoration of the facet planes and evidence a complex segregation patterning.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.121.015702