DNA Sensing by Field-Effect Transistors Based on Networks of Carbon Nanotubes

We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evid...

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Published in:Journal of the American Chemical Society 2007-01, Vol.129 (46), p.14427-14432
Main Authors: Gui, Ee Ling, Li, Lain-Jong, Zhang, Keke, Xu, Yangping, Dong, Xiaochen, Ho, Xinning, Lee, Pooi See, Kasim, Johnson, Shen, Z X, Rogers, JohnA, Mhaisalkar, S G
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container_issue 46
container_start_page 14427
container_title Journal of the American Chemical Society
container_volume 129
creator Gui, Ee Ling
Li, Lain-Jong
Zhang, Keke
Xu, Yangping
Dong, Xiaochen
Ho, Xinning
Lee, Pooi See
Kasim, Johnson
Shen, Z X
Rogers, JohnA
Mhaisalkar, S G
description We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evidence for the notion that the energy level alignment between electrode and SWCNTs can be affected by DNA immobilization and hybridization. The study of location-selective capping using photoresist provides comprehensive evidence that the sensing of DNA is dominated by the change in metal-SWCNT junctions rather than the channel conductance.
doi_str_mv 10.1021/ja075176gPII:S0002-7863(07)05176-1
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title DNA Sensing by Field-Effect Transistors Based on Networks of Carbon Nanotubes
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