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Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes

Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an import...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2018-09, Vol.10 (35), p.29552-29564
Main Authors: Ashcheulov, Petr, Taylor, Andrew, Mortet, Vincent, Poruba, Aleš, Le Formal, Florian, Krýsová, Hana, Klementová, Mariana, Hubík, Pavel, Kopeček, Jaromír, Lorinčík, Jan, Yum, Jun-Ho, Kratochvílová, Irena, Kavan, Ladislav, Sivula, Kevin
Format: Article
Language:English
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Summary:Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal toward a suitable protection of otherwise unstable semiconductors used in PEC cells. Here, we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that  BDD layers protect the underlying Si photoelectrodes over a wide pH range (1–14) in aqueous electrolyte solutions. A BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution. Si|BDD photoelectrodes show no sign of performance degradation after a continuous PEC treatment in neutral, acidic, and basic electrolytes. The deposition of a cobalt phosphate (CoPi) oxygen evolution catalyst onto the BDD layer significantly reduces the overpotential for water oxidation, demonstrating the ability of  BDD layers to substitute the transparent conductive oxide coatings, such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO), frequently used as protective layers in Si photoelectrodes.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b08714