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Spectroscopic characterization of Si/Mo thin-film stack at extreme ultraviolet range
A noninvasive method for characterizing Si/Mo thin-film stack thickness and its complex transfer function using common-path optical coherence tomography is proposed, analyzed, and experimentally demonstrated. A laser-produced plasma (LPP)-based extreme ultraviolet (EUV) source was excited by a four-...
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Published in: | Optics letters 2018-08, Vol.43 (16), p.4029-4032 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | A noninvasive method for characterizing Si/Mo thin-film stack thickness and its complex transfer function using common-path optical coherence tomography is proposed, analyzed, and experimentally demonstrated. A laser-produced plasma (LPP)-based extreme ultraviolet (EUV) source was excited by a four-stage nanosecond Yb:fiber laser amplifier with a pulse energy of 1.01 mJ. The tabletop LPP EUV source was compact and stable for generating the EUV interference fringes. The measured complex transfer function of the Si/Mo stack was verified near the pristine 13.5-nm wavelength range. |
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ISSN: | 0146-9592 1539-4794 |
DOI: | 10.1364/OL.43.004029 |