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Spectroscopic characterization of Si/Mo thin-film stack at extreme ultraviolet range

A noninvasive method for characterizing Si/Mo thin-film stack thickness and its complex transfer function using common-path optical coherence tomography is proposed, analyzed, and experimentally demonstrated. A laser-produced plasma (LPP)-based extreme ultraviolet (EUV) source was excited by a four-...

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Bibliographic Details
Published in:Optics letters 2018-08, Vol.43 (16), p.4029-4032
Main Authors: Li, Yen-Yin, Lee, Yin-Wen, Ho, Tuan-Shu, Wang, Jhih-Hong, Wu, I-Chou, Hsu, Ting-Wei, Chen, Yu-Tung, Huang, Sheng-Lung
Format: Article
Language:English
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Summary:A noninvasive method for characterizing Si/Mo thin-film stack thickness and its complex transfer function using common-path optical coherence tomography is proposed, analyzed, and experimentally demonstrated. A laser-produced plasma (LPP)-based extreme ultraviolet (EUV) source was excited by a four-stage nanosecond Yb:fiber laser amplifier with a pulse energy of 1.01 mJ. The tabletop LPP EUV source was compact and stable for generating the EUV interference fringes. The measured complex transfer function of the Si/Mo stack was verified near the pristine 13.5-nm wavelength range.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.43.004029