Electrically insulating Al sub(2)O sub(3) and SiO sub(2) films for sensor and photovoltaic applications deposited by reactive pulse magnetron sputtering, hollow cathode arc activated deposition and magnetron-PECVD

• Published in: Surface & coatings technology 2008-08, Vol.202 (22-23), p.5680-5683
• Main Authors: Frach, P, Bartzsch, H, Glosz, D, Fahland, M, Handel, F
• Format: Article
• Language: English
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2008.06.043

Electrically insulating films find wide applications in electronics, sensor and medical technology as well as in photovoltaics. This paper describes the deposition of Al sub(2)O sub(3) and SiO sub(2) films using reactive pulse magnetron sputtering, hollow cathode arc activated deposition and Magnetron-PECVD. The deposition rate of these processes ranges between 1 and 4 nm/s in stationary mode and between 80 and 1000 nm m/min in dynamic mode. Breakdown field strength values between 1 and 9 MV/cm were achieved for the as-deposited Al sub(2)O sub(3) and SiO sub(2) films. The resistivity of the sputtered films is between 10 super(+) super(1) super(5) and 10 super(+) super(1) super(7) Omega cm. In the case of SiO sub(2) films, considerably higher resistivity and breakdown field strength were obtained for process conditions with high plasma density and hence increased energetic substrate bombardment. Example applications of the SiO sub(2) and Al sub(2)O sub(3) films are metal membrane based pressure sensors and CIS/CIGS photovoltaics on metal strips.