Enhancement of Switching Characteristic for p‑Type Oxide Semiconductors Using Hypochlorous Acid

We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuO x ) thin films by reacting with CuO x . On robust oxidation by HClO, the numbe...

Full description

Saved in:
Bibliographic Details
Published in:ACS applied materials & interfaces 2018-09, Vol.10 (38), p.32337-32343
Main Authors: Jung, Tae Soo, Lee, Heesoo, Park, Sung Pyo, Kim, Hee Jun, Lee, Jin Hyeok, Kim, Dongwoo, Kim, Hyun Jae
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuO x ) thin films by reacting with CuO x . On robust oxidation by HClO, the numbers of Cu–O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuO x thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10–3 cm2/V·s. Pristine CuO x TFTs did not exhibit switching.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b10390