Versatile and Scalable Strategy To Grow Sol–Gel Derived 2H-MoS2 Thin Films with Superior Electronic Properties: A Memristive Case

• Published in: ACS applied materials & interfaces 2018-10, Vol.10 (40), p.34392-34400
• Main Authors: Nardi, Marco V, Timpel, Melanie, Ligorio, Giovanni, Zorn Morales, Nicolas, Chiappini, Andrea, Toccoli, Tullio, Verucchi, Roberto, Ceccato, Riccardo, Pasquali, Luca, List-Kratochvil, Emil J. W, Quaranta, Alberto, Dirè, Sandra
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.8b12596

Transition metal dichalcogenides, such as molybdenum disulfide (MoS2), show peculiar chemical/physical properties that enable their use in applications ranging from micro- and nano-optoelectronics to surface catalysis, gas and light detection, and energy harvesting/production. One main limitation to fully harness the potential of MoS2 is given by the lack of scalable and low environmental impact synthesis of MoS2 films with high uniformity, hence setting a significant challenge for industrial applications. In this work, we develop a versatile and scalable sol–gel-derived MoS2 film fabrication by spin coating deposition of an aqueous sol on different technologically relevant, flexible substrates with annealing at low temperatures (300 °C) and without the need of sulfurization and/or supply of hydrogen as compared to cutting-edge techniques. The electronic and physical properties of the MoS2 thin films were extensively investigated by means of surface spectroscopy and structural characterization techniques. Spatially homogenous nanocrystalline 2H-MoS2 thin films were obtained exhibiting high chemical purity and excellent electronic properties such as an energy band gap of 1.35 eV in agreement with the 2H phase of the MoS2, and a density of states that corresponds to the n-type character expected for high-quality 2H-MoS2. The potential use of sol–gel-grown MoS2 as the candidate material for electronic applications was tested via electrical characterization and demonstrated via the reversible switching in resistivity typical for memristors with a measured ON–OFF ratio ≥102. The obtained results highlight that the novel low-cost fabrication method has a great potential to promote the use of high-quality MoS2 in technological and industrial-relevant scalable applications.