n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

Owing to their few lateral dangling bonds and enhanced gate electrostatics, two-dimensional semiconductors have attracted much attention for the fabrication of channels in next-generation field-effect transistors (FETs). Herein, combining first-principle band structure calculations with more precise...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2018, Vol.2 (38), p.24641-24651
Main Authors: Shi, Bowen, Wang, Yangyang, Li, Jingzhen, Zhang, Xiuying, Yan, Jiahuan, Liu, Shiqi, Yang, Jie, Pan, Yuanyuan, Zhang, Han, Yang, Jinbo, Pan, Feng, Lu, Jing
Format: Article
Language:English
Subjects:
Band structure
Band structure of solids
Contact resistance
Copper
Electrodes
Electrostatics
Field effect transistors
First principles
Gold
Graphene
Indium selenides
Interfacial properties
Mathematical analysis
Monolayers
Multilayers
Palladium
Pinning
Platinum
Polarity
Quantum transport
Semiconductor devices
Silver
Structural damage
Transistors
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Summary:Owing to their few lateral dangling bonds and enhanced gate electrostatics, two-dimensional semiconductors have attracted much attention for the fabrication of channels in next-generation field-effect transistors (FETs). Herein, combining first-principle band structure calculations with more precise quantum transport simulations, we systematically explore the interface properties between monolayer (ML) indium selenide (InSe) and a sequence of common electrodes in an FET. The ML InSe band structure is damaged by Sc, Au, Cr, Pt, and Pd electrodes but identifiable in contact with Ag, Cu, In, graphene and ML O-terminated Cr 2 C electrodes. A lateral n-type Schottky contact is generated with Sc, Au, Cr, Pt, Pd, and ML graphene electrodes owing to Fermi level pinning originating from the metal-induced gap states, which feature a pinning factor of 0.32. Luckily, a highly desirable lateral n-type Ohmic contact is generated with the Ag, Cu, and In electrodes. The calculated contact polarity is in agreement with the available experimental results using Au, Cr, ML graphene, Ag, and In as electrodes. Remarkably, a lateral p-type Schottky contact is generated with ML O-terminated Cr 2 C despite the very high work function of ML InSe. Therefore, this study offers a deeper understanding of ML InSe device interfaces and instructions for the design of ML InSe transistors. We explore the contact properties of monolayer InSe transistors and obtain n-type Ohmic/p-type Schottky contacts.
ISSN:1463-9076
1463-9084
DOI:10.1039/c8cp04615h