Carrier Engineering in Polarization-Sensitive Black Phosphorus van der Waals Junctions

• Published in: ACS applied materials & interfaces 2018-10, Vol.10 (41), p.35615-35622
• Main Authors: Su, Bao-Wang, Li, Xiao-Kuan, Jiang, Xiao-Qiang, Xin, Wei, Huang, Kai-Xuan, Li, De-Kang, Guo, Hao-Wei, Liu, Zhi-Bo, Tian, Jian-Guo
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.8b12814

van der Waals p-n heterostructures based on p-type black phosphorus (BP) integrated with other two-dimensional (2D) layered materials have shown potential applications in electronic and optoelectronic devices, including logic rectifiers and polarization-sensitive photodetectors. However, the engineering of carriers transport anisotropy, which is related to the linear dichroism, have not yet been investigated. Here, we demonstrate a novel van der Waals device of orientation-perpendicular BP homojunction based on the anisotropic band structures between the armchair and zigzag directions. The structure exhibits good gate-tunable diode-like rectification characteristics caused by the barrier between the two perpendicular crystal orientations. Moreover, we demonstrate that the unique mechanisms of the polarization-sensitivity properties of this junction are involved with the linear dichroism and the anisotropic carriers transport engineering. These results were verified by the scanning photocurrent images experiments. This work paves the way for 2D anisotropic layered materials for next-generation electronic and optoelectronic devices.