Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for...

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Bibliographic Details
Published in:Nanoscale 2018-10, Vol.10 (38), p.18315-18322
Main Authors: Li, Song, Guo, Xiaoyang, Hu, Yongsheng, Lv, Ying, Lin, Jie, Fan, Yi, Zhang, Nan, Liu, Xingyuan
Format: Article
Language:English
Subjects:
Carrier transport
Crystal defects
Current efficiency
Defects
Efficiency
Electroluminescence
Grain boundaries
Perovskites
Quantum efficiency
Tetrabutylammonium bromide
X ray photoelectron spectroscopy
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Summary:Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for improvement of PeLED performance. By employing a TBAB-treated interfacial layer, interface defects are reduced and it results in further promotion of electroluminescence performance of PeLED, including turn-on voltage of 2.6 V, brightness as high as 67 300 cd m−2, current efficiency of 22.5 cd A−1 and external quantum efficiency of 6.28%. Our results shed light on optimization of inorganic PeLEDs by focusing on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.
ISSN:2040-3364
2040-3372
DOI:10.1039/c8nr06311g