Electrochemically prepared oxides for resistive switching memories

Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is th...

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Bibliographic Details
Published in:Faraday discussions 2019-02, Vol.213, p.165-181
Main Authors: Zaffora, A, Di Quarto, F, Habazaki, H, Valov, I, Santamaria, M
Format: Article
Language:English
Subjects:
Anodizing
Electrolytes
Endurance
Material properties
Oxides
Solid electrolytes
Switching
Thin films
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Summary:Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties ( e.g. retention, endurance, etc. ). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories. Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.
ISSN:1359-6640
1364-5498
DOI:10.1039/c8fd00112j