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Intrinsic Carrier Transport of Phase‐Pure Homologous 2D Organolead Halide Hybrid Perovskite Single Crystals

This work reveals the intrinsic carrier transport behavior of 2D organolead halide perovskites based on phase‐pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (RPP) (BA)2(MA)n−1PbnI3n+1 single crystals. The 2D perovskite field effect transistors with high‐quality exfoliated 2D perovski...

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Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-12, Vol.14 (52), p.e1803763-n/a
Main Authors: Li, Min‐Ken, Chen, Tzu‐Pei, Lin, Yen‐Fu, Raghavan, Chinnambedu Murugesan, Chen, Wei‐Liang, Yang, Shih‐Hsien, Sankar, Raman, Luo, Chih‐Wei, Chang, Yu‐Ming, Chen, Chun‐Wei
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creator Li, Min‐Ken
Chen, Tzu‐Pei
Lin, Yen‐Fu
Raghavan, Chinnambedu Murugesan
Chen, Wei‐Liang
Yang, Shih‐Hsien
Sankar, Raman
Luo, Chih‐Wei
Chang, Yu‐Ming
Chen, Chun‐Wei
description This work reveals the intrinsic carrier transport behavior of 2D organolead halide perovskites based on phase‐pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (RPP) (BA)2(MA)n−1PbnI3n+1 single crystals. The 2D perovskite field effect transistors with high‐quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single‐crystal flakes with various n values under different temperatures. Unipolar n‐type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 × 10−3, 8.3 × 10−2, and 1.25 cm2 V−1 s−1 at 77 K, respectively. Furthermore, by combining temperature‐dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic–inorganic hybrid perovskites based on phase‐pure homologous single crystals. 2D organolead halide perovskite field effect transistors, which are fabricated based on phase‐pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (BA)2(MA)n−1PbnI3n+1 single crystals are demonstrated. A strong dependence of carrier transport behavior of the 2D organolead halide hybrid perovskites on the n value is revealed.
doi_str_mv 10.1002/smll.201803763
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The 2D perovskite field effect transistors with high‐quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single‐crystal flakes with various n values under different temperatures. Unipolar n‐type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 × 10−3, 8.3 × 10−2, and 1.25 cm2 V−1 s−1 at 77 K, respectively. Furthermore, by combining temperature‐dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic–inorganic hybrid perovskites based on phase‐pure homologous single crystals. 2D organolead halide perovskite field effect transistors, which are fabricated based on phase‐pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (BA)2(MA)n−1PbnI3n+1 single crystals are demonstrated. 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The 2D perovskite field effect transistors with high‐quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single‐crystal flakes with various n values under different temperatures. Unipolar n‐type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 × 10−3, 8.3 × 10−2, and 1.25 cm2 V−1 s−1 at 77 K, respectively. Furthermore, by combining temperature‐dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic–inorganic hybrid perovskites based on phase‐pure homologous single crystals. 2D organolead halide perovskite field effect transistors, which are fabricated based on phase‐pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (BA)2(MA)n−1PbnI3n+1 single crystals are demonstrated. 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The 2D perovskite field effect transistors with high‐quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single‐crystal flakes with various n values under different temperatures. Unipolar n‐type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 × 10−3, 8.3 × 10−2, and 1.25 cm2 V−1 s−1 at 77 K, respectively. Furthermore, by combining temperature‐dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic–inorganic hybrid perovskites based on phase‐pure homologous single crystals. 2D organolead halide perovskite field effect transistors, which are fabricated based on phase‐pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (BA)2(MA)n−1PbnI3n+1 single crystals are demonstrated. A strong dependence of carrier transport behavior of the 2D organolead halide hybrid perovskites on the n value is revealed.</abstract><cop>Germany</cop><pub>Wiley Subscription Services, Inc</pub><pmid>30430728</pmid><doi>10.1002/smll.201803763</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-3096-249X</orcidid></addata></record>
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subjects 2D RPP single crystals
Carrier mobility
Carrier transport
Electric contacts
Electrical properties
Field effect transistors
Homology
intrinsic charge transport
Nanotechnology
Optical measurement
Perovskites
Phase transitions
photoluminescence
Semiconductor devices
Single crystals
solution growth
Temperature dependence
title Intrinsic Carrier Transport of Phase‐Pure Homologous 2D Organolead Halide Hybrid Perovskite Single Crystals
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