Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chem...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2018-11, Vol.362 (6416), p.817-821
Main Authors: Lee, Joo Song, Choi, Soo Ho, Yun, Seok Joon, Kim, Yong In, Boandoh, Stephen, Park, Ji-Hoon, Shin, Bong Gyu, Ko, Hayoung, Lee, Seung Hee, Kim, Young-Min, Lee, Young Hee, Kim, Ki Kang, Kim, Soo Min
Format: Article
Language:English
Subjects:
Adatoms
Boron
Boron nitride
Boundaries
Chemical synthesis
Chemical vapor deposition
Collimation
Crystal defects
Crystal structure
Crystallinity
Crystals
Current carriers
Diffusion
Electrostatic properties
Epitaxial growth
Gold
Grain boundaries
Graphene
Heterostructures
High temperature
Nitrogen
Organic chemistry
Polycrystals
Single crystals
Solubility
Substrates
Tungsten
Tungsten disulfide
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Summary:Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aau2132