Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

• Published in: Journal of crystal growth 1999, Vol.196 (1), p.33-40
• Main Authors: Pietzonka, I., Franzheld, R., Saß, T., Benndorf, G., Schwabe, R., Handschuh, M., Gottschalch, V.
• Format: Article
• Language: English
• Subjects: (GaIn)P; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Metallorganic vapor phase epitaxy; Methods of deposition of films and coatings; film growth and epitaxy; MOVPE growth and doping behaviour; Novel precursors; Optical properties; Physics; Semiconducting gallium compounds; Semiconductor doping; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Toxicity; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00780-5

The suitability of ditertiarybutylphosphine (DitBuPH) for the low-pressure MOVPE growth of (GaIn)P has been investigated. This source is distinguished by a further reduction of the direct H-functions in the molecule, its liquid state and its suitable vapour pressure and is therefore advantageous from the toxicity and safety viewpoint. The optical and structural properties are compared with those obtained using tertiarybutylphosphine (TBP) and PH 3. Moreover, doping experiments have been carried out using disilane and diethylzinc as dopants. No difference in the growth and doping behaviour for all three used P-sources could be determined and the data are in good agreement with literature values.