Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions a...

Full description

Saved in:
Bibliographic Details
Main Authors: Walkey, D.J., Smy, T.J., MacElwee, T., Maliepaard, M.
Format: Conference Proceeding
Language:English
Subjects:
Electrical resistance measurement
Gallium arsenide
Heat resistance
Indium compounds
Indium phosphide
Integrated circuit measurements
Power measurement
Predictive models
Semiconducting gallium arsenide
Semiconductor devices
Silicon
Temperature dependence
Temperature distribution
Thermal conductivity
Thermal resistance
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions are found to be within 5% of measurements for power levels to 3 mW//spl mu/m/sup 2/ and over a 165/spl deg/C substrate temperature range.
ISSN:1065-2221
DOI:10.1109/STHERM.2001.915183